Product Summary

The MRFE6S9045NR1 is a RF Power Field Effect Transistor, which is designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of MRFE6S9045NR1 makes it ideal for large- signal, common-source amplifier applications in 28 volt base station equipment.

Parametrics

MRFE6S9045NR1 absolute maximum ratings: (1)drain-source voltage: -0.5 to +66 V; (2)gate-source voltage: -0.5 to +12 V; (3)Maximum Operation Voltage: 32 V; (4)storage temperature range: -65 to +150 ℃; (5)Case Operating Temperature: 150 ℃; (6)operating junction temperature: 225 ℃.

Features

MRFE6S9045NR1 features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)Integrated ESD Protection; (3)225℃ Capable Plastic Package; (4)RoHS Compliant; (5)In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.

Diagrams

MRFE6S9045NR1 test circuit

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