Product Summary
The MWIC930NR1 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. MWIC930NR1 uses Freescale newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi-stage structure. Its wideband On-Chip integral matching circuitry makes MWIC930NR1 usable from 790 to 1000 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, N-CDMA and W-CDMA.
Parametrics
MWIC930NR1 absolute maximum ratings: (1)Drain-Source Voltage VDSS: -0.5 to +65 Vdc; (2)Gate-Source Voltage VGS: -0.5 to +15 Vdc; (3)Storage Temperature Range Tstg: -65 to +175 ℃; (4)Operating Junction Temperature TJ: 200 ℃.
Features
MWIC930NR1 features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)On-Chip Matching (50 Ohm Input, DC Blocked, >4 Ohm Output); (3)Integrated Quiescent Current Temperature Compensation with Enable/Disable Function; (4)On-Chip Current Mirror gm Reference FET for Self Biasing Application; (5)Integrated ESD Protection; (6)200℃ Capable Plastic Package; (7)N Suffix Indicates Lead-Free Terminations. RoHS Compliant.; (8)In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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MWIC930NR1 |
Freescale Semiconductor |
RF Amplifier 30W 900MHZ TO272WBN |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||
MWIC930GNR1 |
Freescale Semiconductor |
RF Amplifier 30W 900MHZ TO272WBGN |
Data Sheet |
Negotiable |
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MWIC930GR1 |
IC PWR AMP RF 30W TO272-16GW |
Data Sheet |
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MWIC930NR1 |
Freescale Semiconductor |
RF Amplifier 30W 900MHZ TO272WBN |
Data Sheet |
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MWIC930R1 |
MOSFET RF N-CH 28V 30W TO-272-16 |
Data Sheet |
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MWIC930R5 |
MOSFET RF N-CH 28V 30W TO-272-16 |
Data Sheet |
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