Product Summary

The MWIC930NR1 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. MWIC930NR1 uses Freescale newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi-stage structure. Its wideband On-Chip integral matching circuitry makes MWIC930NR1 usable from 790 to 1000 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, N-CDMA and W-CDMA.

Parametrics

MWIC930NR1 absolute maximum ratings: (1)Drain-Source Voltage VDSS: -0.5 to +65 Vdc; (2)Gate-Source Voltage VGS: -0.5 to +15 Vdc; (3)Storage Temperature Range Tstg: -65 to +175 ℃; (4)Operating Junction Temperature TJ: 200 ℃.

Features

MWIC930NR1 features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)On-Chip Matching (50 Ohm Input, DC Blocked, >4 Ohm Output); (3)Integrated Quiescent Current Temperature Compensation with Enable/Disable Function; (4)On-Chip Current Mirror gm Reference FET for Self Biasing Application; (5)Integrated ESD Protection; (6)200℃ Capable Plastic Package; (7)N Suffix Indicates Lead-Free Terminations. RoHS Compliant.; (8)In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Diagrams

MWIC930NR1 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MWIC930NR1
MWIC930NR1

Freescale Semiconductor

RF Amplifier 30W 900MHZ TO272WBN

Data Sheet

0-358: $17.67
358-500: $16.78
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Quantity
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MWIC930GNR1

Freescale Semiconductor

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Data Sheet

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Data Sheet

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MWIC930NR1
MWIC930NR1

Freescale Semiconductor

RF Amplifier 30W 900MHZ TO272WBN

Data Sheet

0-358: $17.67
358-500: $16.78
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Data Sheet

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Data Sheet

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