Product Summary

The MW7IC2725GNR1 is a RF LDMOS Wideband Integrated Power Amplifier. The MW7IC2725GNR1 wideband integrated circuit is designed with on-chip matching that makes it usable from 2300- 2700 MHz. This multi- stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats.

Parametrics

MW7IC2725GNR1 absolute maximum ratings: (1)Drain-Source Voltage VDS: -0.5 to +65 Vdc; (2)Gate-Source Voltage VGS: -0.5 to +10 Vdc; (3)Operating Voltage VDD: 32 to +0 Vdc; (4)Storage Temperature Range Tstg: -65 to +150 ℃; (5)Case Operating Temperature TC: 150 ℃; (6)Operating Junction Temperature (1,2) TJ: 225 ℃; (7)Input Power Pin: 22 dBm.

Features

MW7IC2725GNR1 features: (1)100% PAR Tested for Guaranteed Output Power Capability; (2)Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters; (3)On-Chip Matching (50 Ohm Input, DC Blocked); (4)Integrated Quiescent Current Temperature Compensation with Enable/Disable Function; (5)Integrated ESD Protection; (6)225℃ Capable Plastic Package; (7)RoHS Compliant.

Diagrams

MW7IC2725GNR1 block diagram

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