(Hong Kong)
Product Summary
The MW4IC915NBR1 wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses the newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi-stage structure. Its wideband On-Chip design makes MW4IC915NBR1 usable from 750 to 1000 MHz. The linearity performances cover all modulations for cellular applications: GSM,
GSM EDGE, TDMA, N-CDMA and W-CDMA.
Parametrics
MW4IC915NBR1 absolute maximum ratings: (1)Drain-Source Voltage VDSS: -0.5. +65 Vdc; (2)Gate-Source Voltage VGS: -0.5. +15 Vdc; (3)Storage Temperature Range Tstg: -65 to +175 ℃; (4)Operating Junction Temperature TJ: 200 ℃.
Features
MW4IC915NBR1 features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)On-Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output); (3)Integrated Quiescent Current Temperature Compensation with Enable/Disable Function; (4)On-Chip Current Mirror gm Reference FET for Self Biasing Application; (5)Integrated ESD Protection; (6)200℃ Capable Plastic Package; (7)N Suffix Indicates Lead-Free Terminations. RoHS Compliant.; (8)In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Diagrams
| Image | Part No | Mfg | Description |  |
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 MW4IC915NBR1 |
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