Product Summary

The MRF8S9120NR3 is an N-Channel Enhancement-Mode Lateral MOSFET designed for CDMA base station applications with frequencies from 700 to 1000 MHz. The MRF8S9120NR3 can be used in class AB and Class C for all typical cellular base station modulation formats.

Parametrics

MRF8S9170NR3 absolute maximum ratings: (1)Drain-Source Voltage VDSS: -0.5 to +70 Vdc; (2)Gate-Source Voltage VGS: -6.0 to +10 Vdc; (3)Operating Voltage VDD: 32, +0 Vdc; (4)Storage Temperature Range Tstg: -65 to +150 ℃; (5)Case Operating Temperature TC: 150 ℃; (6)Operating Junction Temperature (1,2) TJ: 225 ℃.

Features

MRF8S9170NR3 features: (1)100% PAR Tested for Guaranteed Output Power Capability; (2)Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters; (3)Internally Matched for Ease of Use; (4)Integrated ESD Protection; (5)Greater Negative Gate-Source Voltage Range for Improved Class C Operation; (6)Designed for Digital Predistortion Error Correction Systems; (7)Optimized for Doherty Applications; (8)225℃ Capable Plastic Package; (9)RoHS Compliant; (10)In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.

Diagrams

MRF8S9170NR3 test circuit

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