Product Summary

The MRF8S21120HSR3 is a RF power field effect transistor.

Parametrics

MRF8S21120HSR3 absolute maximum ratings: (1)Drain--Source Voltage VDSS: -0.5 to +65 Vdc; (2)Gate--Source Voltage VGS: -6.0 to +10 Vdc; (3)Operating Voltage VDD: 32, +0 Vdc; (4)Storage Temperature Range Tstg: -65 to +150 ℃; (5)Case Operating Temperature TC: 150 ℃; (6)Operating Junction Temperature (2,3) TJ: 225 ℃; (7)CW Operation @ TC = 25℃, CW: 94W.

Features

MRF8S21120HSR3 features: (1)100% PAR Tested for Guaranteed Output Power Capability; (2)Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters; (3)Internally Matched for Ease of Use; (4)Integrated ESD Protection; (5)Greater Negative Gate--Source Voltage Range for Improved Class C Operation; (6)Designed for Digital Predistortion Error Correction Systems; (7)Optimized for Doherty Applications; (8)RoHS Compliant; (9)In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Diagrams

MRF8S21120HSR3 Test Circuit

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