(Hong Kong)
Product Summary
The MRF6V2150NBR1 is a RF power field effect transistor. MRF6V2150NBR1 is designed for commercial and industrial broadband applications with frequencies from 470 to 860 MHz. It is suitable for use in broadcast applications.
Parametrics
MRF6V2150NBR1 absolute maximum ratings: (1)Drain--Source Voltage VDSS: -0.5 to +110 Vdc; (2)Gate--Source Voltage VGS: -0.5 to +12 Vdc; (3)Storage Temperature Range Tstg: -65 to +150 ℃; (4)Case Operating Temperature TC: 150 ℃; (5)Operating Junction Temperature (2,3) TJ: 225 ℃.
Features
MRF6V2150NBR1 features: (1)Characterized with Series Equivalent Large--Signal Impedance Parameters; (2)Qualified Up to a Maximum of 50 VDD Operation; (3)Integrated ESD Protection; (4)225℃ Capable Plastic Package; (5)In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel; (6)RoHS Compliant.
Diagrams
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 MRF6V2150NBR1 |
Freescale Semiconductor |
Transistors RF MOSFET Power VHV6 150W |
Data Sheet |
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