Product Summary

The MD7P19130HSR3 is an N-Channel Enhancement-Mode Lateral MOSFET which is designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. The MD7P19130HSR3 is suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cel lular radi o and WLL applications.

Parametrics

MD7P19130HSR3 absolute maximum ratings: (1)Drain-Source Voltage VDSS: -0.5 to +65 Vdc; (2)Gate-Source Voltage VGS: -6.0, +10 Vdc; (3)Operating Voltage VDD: 32, +0 Vdc; (4)Storage Temperature Range Tstg: - 65 to +150 ℃; (5)Case Operating Temperature TC: 150 ℃; (6)Operating Junction Temperature (1,2) TJ: 225 ℃.

Features

MD7P19130HSR3 features: (1)100% PAR Tested for Guaranteed Output Power Capability; (2)Characterized with Series Equivalent Large-Signal Impedance Parameters; (3)Internally Matched for Ease of Use; (4)Integrated ESD Protection; (5)Greater Negative Gate-Source Voltage Range for Improved Class C Operation; (6)RoHS Compliant; (7)In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Diagrams

MD7P19130HSR3 pin connections

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MD7P19130HSR3
MD7P19130HSR3

Freescale Semiconductor

RF Amplifier HV7 1.9GHZ 40W NI780-4S

Data Sheet

0-188: $38.56
188-250: $38.56
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MD7P19130HR3
MD7P19130HR3

Freescale Semiconductor

RF Amplifier HV7 1.9GHZ 40W NI780-4

Data Sheet

Negotiable 
MD7P19130HR5
MD7P19130HR5

Freescale Semiconductor

Power Driver ICs HV7 1.9GHZ 40W NI780-4

Data Sheet

Negotiable 
MD7P19130HSR3
MD7P19130HSR3

Freescale Semiconductor

RF Amplifier HV7 1.9GHZ 40W NI780-4S

Data Sheet

0-188: $38.56
188-250: $38.56
MD7P19130HSR5
MD7P19130HSR5

Freescale Semiconductor

RF Amplifier HV7 1.9GHZ 40W NI780-4S

Data Sheet

Negotiable